2N6490

Inchange Semiconductor Silicon PNP Power Transistors Product Specification 2N6489 2N6490 2N6491 DESCRIPTION With TO-220 package Excellent safe operating area Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6489 VCBO Collector-base voltage 2N6490 2N6491 2N6489 VCEO Collector-emitter voltage 2N6490 2N6491 VEBO Emitter-base voltage IC Collector current IB Base current PT Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance from junction to case VALUE -50 -70 -90 -40 -60 -80 -5 -15 -5 75 150 -65~150 UNIT V V V A A W MAX 1.67 UNIT /W Inchange Semiconductor Silicon PNP Power Transistors Product Specification 2N6489 2N6490 2N6491 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage 2N6489 2N6490 IC=-0.2A ;IB=0 2N6491 VCEsat-1 Collector-emitter saturation voltage IC=-5A;IB=-0.5A VCEsat-2 Collector-emitter saturation voltage IC=-15A;IB=-5A VBE-1 Base-emitter on voltage IC=-5A ; VCE=-4V VBE-2 ICEX ICEO Base-emitter on voltage 2N6489 Collector cut-off current VBE=-1.5V 2N6490...