KF5N53DS

SEMICONDUCTOR TECHNICAL DATA KF5N53DZ/DS N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 525V, ID= 4.1A Drain-Source ON Resistance : RDS(ON)=1.5 Qg(typ) = 12nC (Max) @VGS = 10V trr(typ) = 150ns (KF5N53DS) trr(typ) = 300ns (KF5N53DZ) MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt Drain Power Dissipation Tc=25 Derate above 25 PD Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA RATING 525 30 4.1 2.6 13 270 8.6 20 59.5 0.48 150 -55 150 2.1 110 www.ckb-sh.com UNIT V V A mJ mJ V/ns W W/ /W /W A CD B H G FF J E 123 O K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN O 0.1 MAX 1. GATE 2. DRAIN 3. SOURCE DPAK (1) PIN CONNECTION (KF5N53DZ/DS) D G S 2011. 3. 16 Revis...