2SB1386

2SB1 38 6 TRANSISTOR(PNP) FEATURES z Low collector saturation voltage, z Execllent current-to-gain characteristics MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -30 -20 -6 -5 0.5 150 -55-150 Units V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test conditions V(BR)CBO IC=-50μA,IE=0 V(BR)CEO IC=-1mA,IB=0 V(BR)EBO IE=-50μA,IC=0 ICBO VCB=-20V,IE=0 IEBO VEB=-5V,IC=0 hFE VCE=-2V,IC=-500mA VCE(sat) IC=-4A,IB=-100mA fT VCE=-6V,IC=-50mA,f=30MHz Cob VCB=-20V,IE=0,f=1MHz MIN TYP MAX UNIT -30 V -20 V -6 V -0.5 μA -0.5 μA 82 390 -1 V 120 MHz 60 pF CLASSIFICATION OF hFE Rank P Range 82-180 Marking BHP Q 120-270 BHQ R 180-390 BHR JinYu semiconductor www.htsemi.com Typical Characteristics 2SB1 38 6 JinYu semiconductor www.htsemi.com 2SB1 38 6 JinYu semiconductor www.htsemi.com ...