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FDS6692A Dataheets PDF



Part Number FDS6692A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel PowerTrench MOSFET
Datasheet FDS6692A DatasheetFDS6692A Datasheet (PDF)

FDS6692A N-Channel PowerTrench® MOSFET January 2010 FDS6692A N-Channel PowerTrench® MOSFET 30V, 9A, 11.5mΩ Features „ RDS(ON) = 11.5mΩ, VGS = 10V, ID = 9A „ RDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 8.2A „ High performance trench technology for extremely low RDS(ON) „ Low gate charge General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized f.

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FDS6692A N-Channel PowerTrench® MOSFET January 2010 FDS6692A N-Channel PowerTrench® MOSFET 30V, 9A, 11.5mΩ Features „ RDS(ON) = 11.5mΩ, VGS = 10V, ID = 9A „ RDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 8.2A „ High performance trench technology for extremely low RDS(ON) „ Low gate charge General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. „ High power and current handling capability „ RoHS Compliant Applications „ DC/DC converters DD D D SO-8 S SSG 54 63 72 81 ©2010 Fairchild Semiconductor Corporation FDS6692A Rev. A2 1 www.fairchildsemi.com FDS6692A N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TA = 25oC, VGS = 10V, RθJA = 85oC/W) Continuous (TA = 25oC, VGS = 4.5V, RθJA = 85oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Operating and Storage Temperature Ratings 30 ±20 9 8.2 48 79 1.47 -55 to 150 Units V V A A A mJ W oC Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 50 oC/W 85 oC/W Package Marking and Ordering Information Device Marking FDS6692A Device FDS6692A Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, Referenced to 25oC VDS = 24V VGS = 0V VGS = ±20V TJ = 150oC On Characteristics VGS(TH) ∆VGS(TH) ∆TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient RDS(ON) Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 250µA, Referenced to 25oC ID = 9A, VGS = 10V ID = 8.2A, VGS = 4.5V ID TJ = = 91A5,0VoCGS = 10V, Dynamic Characteristics CISS COSS CRSS RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 15V ID = 9A Ig = 1.0mA Min 30 - 1.2 - - Typ Max Units - -V 21 - mV/oC - 1 250 µA - ±100 nA - 2.5 V -5 - mV/oC 8.2 11.5 11 14.5 mΩ 13 19 1210 330 138 2.0 22 12 0.93 3 2.1 4.8 1610 440 210 29 16 1.2 - pF pF pF Ω nC nC nC nC nC nC FDS6692A Rev. A2 2 www.fairchildsemi.com FDS6692A N-Channel PowerTrench® MOSFET Switching Characteristics (VGS = 10V) tON Turn-On Time td(ON) Turn-On Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time tOFF Turn-Off Time Drain-Source Diode Characteristics VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge VDD = 15V, ID = 9A VGS = 10V, RGS = 6.2Ω ISD = 9A ISD = 2.1A ISD = 9A, dISD/dt=100A/µs ISD = 9A, dISD/dt=100A/µs - - 60 ns - 8 - ns - 32 - ns - 33 - ns - 13 - ns - - 69 ns - - 1.25 V - - 1.0 V - - 27 ns - - 17 nC Notes: 1: Starting TJ = 25°C, L = 0.3mH, IAS = 23A, VDD = 27V, VGS = 10V. 2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder 3: mounting surface of the drain RθJA is measured with 1.0 in2 pins. RθJC is guaranteed copper on FR-4 board by design while RθJA is determined by the user’s board design. FDS6692A Rev. A2 3 www.fairchildsemi.com FDS6692A N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted ID, DRAIN CURRENT (A) 24 PULSE DURATION = 80µs 21 DUTY CYCLE = 0.5% MAX 18 15 12 9 6 3 0 0 WAVEFORMS IN DESCENDING ORDER: 10V 5.0V 4.0V 3.5V 3.0V 0.1 0.2 0.3 0.4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 0.5 1.6 ID = 9A 1.4 VGS =10V 1.2 1.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 0.8 0.6 - 80 - 40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160 Figure 3. On Resistance Variation with Temperature RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.8 2.6 2.4 3.0V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.2 4.5V 2 1.8 3.5V 1.6 4.0V 1.4 1.2 1 0.8 0 5.0V 6 12 ID, DRAIN CURRENT (A) 20 10V 24 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.02 0.018 0.016 0.014 ID =9A PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TJ =150oC 0.012 0.01 TJ =25oC 0.008 0.006 2 468 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Vari.


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