Document
FDS6692A N-Channel PowerTrench® MOSFET
January 2010
FDS6692A N-Channel PowerTrench® MOSFET
30V, 9A, 11.5mΩ
Features
RDS(ON) = 11.5mΩ, VGS = 10V, ID = 9A
RDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 8.2A
High performance trench technology for extremely low RDS(ON)
Low gate charge
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
High power and current handling capability
RoHS Compliant
Applications
DC/DC converters
DD D D
SO-8
S SSG
54 63 72 81
©2010 Fairchild Semiconductor Corporation FDS6692A Rev. A2
1
www.fairchildsemi.com
FDS6692A N-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TA = 25oC, VGS = 10V, RθJA = 85oC/W) Continuous (TA = 25oC, VGS = 4.5V, RθJA = 85oC/W) Pulsed
EAS PD TJ, TSTG
Single Pulse Avalanche Energy (Note 1) Power dissipation Operating and Storage Temperature
Ratings 30 ±20
9 8.2 48 79 1.47 -55 to 150
Units V V
A A A mJ W oC
Thermal Characteristics
RθJA RθJA
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
50 oC/W 85 oC/W
Package Marking and Ordering Information
Device Marking FDS6692A
Device FDS6692A
Package SO-8
Reel Size 330mm
Tape Width 12mm
Quantity 2500 units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
∆BVDSS ∆TJ IDSS
Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
ID = 250µA, Referenced
to
25oC
VDS = 24V VGS = 0V VGS = ±20V
TJ = 150oC
On Characteristics
VGS(TH) ∆VGS(TH) ∆TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage Temperature Coefficient
RDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 250µA, Referenced
to
25oC
ID = 9A, VGS = 10V
ID = 8.2A, VGS = 4.5V
ID TJ
= =
91A5,0VoCGS
=
10V,
Dynamic Characteristics
CISS COSS CRSS RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge
VDS = 15V, VGS = 0V, f = 1MHz
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 5V VGS = 0V to 1V
VDD = 15V ID = 9A Ig = 1.0mA
Min
30
-
1.2 -
-
Typ Max Units
- -V
21 - mV/oC
-
1 250
µA
- ±100 nA
- 2.5 V
-5 - mV/oC
8.2 11.5 11 14.5 mΩ 13 19
1210 330 138 2.0 22 12 0.93
3 2.1 4.8
1610 440 210
29 16 1.2 -
pF pF pF
Ω nC nC nC nC nC nC
FDS6692A Rev. A2
2 www.fairchildsemi.com
FDS6692A N-Channel PowerTrench® MOSFET
Switching Characteristics (VGS = 10V)
tON Turn-On Time
td(ON)
Turn-On Delay Time
tr Rise Time
td(OFF)
Turn-Off Delay Time
tf Fall Time
tOFF Turn-Off Time
Drain-Source Diode Characteristics
VSD
trr QRR
Source to Drain Diode Voltage
Reverse Recovery Time Reverse Recovered Charge
VDD = 15V, ID = 9A VGS = 10V, RGS = 6.2Ω
ISD = 9A ISD = 2.1A ISD = 9A, dISD/dt=100A/µs ISD = 9A, dISD/dt=100A/µs
- - 60 ns - 8 - ns - 32 - ns - 33 - ns - 13 - ns - - 69 ns
- - 1.25 V - - 1.0 V - - 27 ns - - 17 nC
Notes:
1: Starting TJ = 25°C, L = 0.3mH, IAS = 23A, VDD = 27V, VGS = 10V.
2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
3:
mounting surface of the drain RθJA is measured with 1.0 in2
pins. RθJC is guaranteed copper on FR-4 board
by
design
while
RθJA
is determined by the user’s board design.
FDS6692A Rev. A2
3 www.fairchildsemi.com
FDS6692A N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
ID, DRAIN CURRENT (A)
24 PULSE DURATION = 80µs
21 DUTY CYCLE = 0.5% MAX
18
15 12
9
6
3 0
0
WAVEFORMS IN DESCENDING ORDER:
10V 5.0V 4.0V 3.5V 3.0V
0.1 0.2 0.3 0.4 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
0.5
1.6 ID = 9A
1.4 VGS =10V
1.2
1.0
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 0.8
0.6 - 80
- 40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC)
160
Figure 3. On Resistance Variation with Temperature
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
2.8
2.6 2.4 3.0V
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX
2.2 4.5V 2
1.8 3.5V
1.6 4.0V
1.4
1.2
1
0.8 0
5.0V
6 12 ID, DRAIN CURRENT (A)
20
10V 24
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage
0.02 0.018 0.016 0.014
ID =9A
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX
TJ =150oC
0.012 0.01
TJ =25oC
0.008
0.006 2
468 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Vari.