FDS6692A

FDS6692A N-Channel PowerTrench® MOSFET January 2010 FDS6692A N-Channel PowerTrench® MOSFET 30V, 9A, 11.5mΩ Features „ RDS(ON) = 11.5mΩ, VGS = 10V, ID = 9A „ RDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 8.2A „ High performance trench technology for extremely low RDS(ON) „ Low gate charge General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. „ High power and current handling capability „ RoHS Compliant Applications „ DC/DC converters DD D D SO-8 S SSG 54 63 72 81 ©2010 Fairchild Semiconductor Corporation FDS6692A Rev. A2 1 www.fairchildsemi.com FDS6692A N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TA = 25oC, VGS = 10V, RθJA = 85oC/W) Continuous (TA = 25oC, VGS = 4.5V, RθJA = 85oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Operating and Storage Temperature Ratings 30 ±20 9 8.2 48 79 1.47 -55 to 150 Units V V A A A mJ W oC Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 50 oC/W 85 oC/W Package Marking and Ordering Information Device Marking FDS6692A ...