MSF10N65

MSF10N65 650V N-Channel MOSFET Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Application Power Factor Correction LCD TV Power Full and Half Bridge Power Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) IDM Drain Current Pulsed EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dV/dt Peak Diode Recovery dV/dt Value 650 ±30 10 6.0 40 710 10 16.2 4.5 Unit V V A A A mJ A mJ V/ns Publication Order Number: [MSF10N65] © Bruckewell Technology Corporation Rev. A -2014 MSF10N65 650V N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter Power Dissipation (TC = 25 °C) PD Power Dissipation (TC=100°C) TJ,TSTG Operating and Storage Temperature Range NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=13mH, IAS=10.0A,VDD=50V, R...