MSF10N40

MSF10N40 400V N-Channel MOSFET Description The MSF10N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 10.5A, 400V, RDS(on) = 0.55Ω @VGS = 10 V Extended Safe Operating Area Low gate charge (typ 30nC) 100% Avalanche Tested RoHS compliant package Application Power Factor Correction LCD TV Power Full and Half Bridge Power Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage VGS Gate-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) IDM Drain Current Pulsed EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Value 400 ±30 10.5 6.6 402 378 9.2 13.9 Unit V V A A A mJ A mJ Publication Order Number: [MSF10N40] © Bruckewell Technology Corporation Rev. A -2014 MSF10N40 400V N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter dV/dt Peak Diode Recovery dV/dt Power Dissipation (TC = 25 °C) PD Derate above 25°C TJ,TSTG TL Operating and Storage Temperature Ran...