CJD3439

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC HIGH VOLTAGE POWER TRANSISTORS CJD3439 DPAK (TO-252) Plastic Package Designed for use in Line Operated Equipment Requiring High fT ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Base Current Total Power Dissipation at Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC IB PD Tj, Tstg THERMAL CHARACTERISTICS Junction to Case Rth (j-c) VALUE 350 450 5.0 0.3 150 15 0.12 - 65 to +150 8.33 ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage VCEO(sus) IC=5mA, IB=0 Collector Cut Off Current ICEO VCE=300V, IB=0 Collector Cut Off Current ICEX VCE=450V, VEB(off)=1.5V Collector Cut Off Current Emitter Cut Off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Base Emitter On Voltage ICBO IEBO hFE VCE (sat) VBE (sat) VBE (on) VCB=350V, IE=0 VBE=5V, IC=0 IC=2mA, VCE=10V IC=20mA, VCE=10V IC=50mA, IB=4mA IC=50mA, IB=4mA IC=50mA, VCE=10V DYNAMIC CHARACTERISTICS DESCRIPTION Current Gain Bandwidth Product Output Capacitance Small Signal Current Gain SYMBOL fT C0b hfe TEST CONDITION IC=10mA, VCE=10V, f=5MHz VCB=10V, IE=0, f=1MHz IC=5mA, VCE=10V, f=1KHz MIN TYP MAX 350 20 500 20 20 30 15 200 0.5 1.3 0.8...