BD439 BD441 NPN BD440 BD442 PNP
COMPLEMENTARY SILICON POWER TRANSISTORS
CentralTM
Semiconductor Corp.
DESCRIPTION: The ...
BD439 BD441
NPN BD440 BD442
PNP
COMPLEMENTARY SILICON POWER
TRANSISTORS
CentralTM
Semiconductor Corp.
DESCRIPTION: The CENTRAL SEMICONDUCTOR BD439, BD440 series types are Complementary Silicon Power
Transistors, manufactured by the epitaxial base process, designed for medium power, low speed switching applications.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (t≤10ms) Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance
SYMBOL
VCBO VCES VCEO VEBO
IC ICM IB PD TJ, Tstg ΘJA ΘJC
BD439 BD440
BD441 BD442
60 80
60 80
60 80
5.0
4.0
7.0
1.0
36
-65 to +150
100
3.5
ELECTRICAL CHARACTERISTICS: (TC=25°C) SYMBOL TEST CONDITIONS
ICBO
VCB=Rated VCBO
ICES IEBO
VCE=Rated VCEO VEB=5.0V
BVCEO BVCEO
IC=100mA (BD439, BD440) IC=100mA (BD441, BD442)
VCE(SAT) VBE(ON)
IC=2.0A, IB=200mA VCE=1.0V, IC=2.0A
hFE VCE=5.0V, IC=10mA (BD439, BD440) hFE VCE=5.0V, IC=10mA (BD441, BD442)
hFE VCE=1.0V, IC=500mA hFE VCE=1.0V, IC=2.0A (BD439, BD440)
hFE VCE=1.0V, IC=2.0A (BD441, BD442) fT VCE=1.0V, IC=250mA
MIN
60 80
20 15 40 25 15 3.0
MAX 100 100 1.0
0.8 1.5
UNITS V V V V A A A W °C
°C/W °C/W
UNITS μA μA mA V V V V
MHz
R1 (2-February 2009)
CentralTM
Semiconductor Corp.
BD439 BD441
NPN BD440 BD442
PNP
COMPLEMENTARY SILICON POWER
TRANSISTORS
TO-126 CASE - M...