2SAR523UB

General purpose transistor(-50V,-0.1A) 2SAR523M/2SAR523EB/2SAR523UB Structure PNP silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complemets the 2SCR523M/2SCR523EB/2SCR523UB. Applications Switch, LED driver EMT3F Abbreviated symbol : PB Packaging specifications Package Type Packaging Type Code Basic ordering unit (pieces) 2SAR523M 2SAR523EB 2SAR523UB VMT3 Taping T2L 8000 EMT3F Taping TL 3000 UMT3F Taping TL 3000 UMT3F (3) (1) (2) Abbreviated symbol : PB 2.0 0.32 (3) 0.9 2.1 1.25 0.425 0.425 (1) 0.65 0.65 1.3 (2) 0.13 Abbreviated symbol : PB 0.53 0.53  Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO −50 Collector-emitter voltage VCEO −50 Emitter-base voltage VEBO −5 Collector current IC ICP ∗1 −100 −200 Power 2SAR523M,2SAR523EB dissipation 2SAR523UB PD ∗2 150 200 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 ∗1 Pw=1mS Single pulse ∗2 Each terminal mounted on a recommended land Unit V V V mA mA mW mW °C °C inner circuit (3) (1) (1) Base (2) Emitter (2) (3) Collector Electrical characteristics (Ta=25C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. Typ. Max. Unit Conditions ...