2SAR522M

General purpose transistor(-20V,-0.2A) 2SAR522M / 2SAR522EB / 2SAR522UB Structure PNP silicon epitaxial planar transistor Features Complements the 2SCR522M / 2SCR522EB / 2SCR522UB. Dimensions (Unit : mm) VMT3 Applications Switch, LED driver EMT3F Abbreviated symbol : PC 2.1 0.425 1.25 0.425 0.53 0.53 Packaging specifications Package Type Packaging Type Code Basic ordering unit (pieces) 2SAR522M 2SAR522EB 2SAR522UB VMT3 Taping T2L 8000 EMT3F Taping TL 3000 UMT3F Taping TL 3000  Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO −20 Collector-emitter voltage VCEO −20 Emitter-base voltage VEBO −5 Collector current IC ICP ∗1 −200 −400 Power 2SAR522M,2SAR522EB dissipation 2SAR522UB PD ∗2 150 200 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 ∗1 Pw=1mS Single pulse ∗2 Each terminal mounted on a recommended land Unit V V V mA mA mW mW °C °C UMT3F (3) (1) (2) Abbreviated symbol : PC 2.0 0.32 (3) 0.9 (1) 0.65 0.65 1.3 (2) 0.13 Abbreviated symbol : PC Inner circuit (3) (1) (1) Base (2) Emitter (2) (3) Collector Electrical characteristics (Ta=25C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. Typ. Max. Unit ...