DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3298
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK3298...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK3298
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK3298 is N-channel MOS FET device that features a
low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3298
Isolated TO-220
FEATURES Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.5 A) Gate voltage rating ±30 V Low on-state resistance RDS(on) = 0.75 Ω MAX. (VGS = 10 V, ID = 4.0 A) Avalanche capability ratings Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS
600
V
Gate to Source Voltage (VDS = 0 V) VGSS
±30 V
Drain Current (DC) (TC = 25°C) Drain Current (Pulse) Note1
ID(DC) ID(pulse)
±7.5 A ±30 A
Total Power Dissipation (TA = 25°C) PT1
2.0 W
Total Power Dissipation (TC = 25°C) PT2
40 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg −55 to +150 °C
Single Avalanche Current Note2 Single Avalanche Energy Note2
IAS EAS
7.5 A 37.5 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D1...