FGPF70N30T

FGPF70N30T 300V, 70A PDP Trench IGBT FGPF70N30T 300V, 70A PDP IGBT Features High current capability Low saturation voltage: VCE(sat) =1.5V @ IC = 40A High input impedance Fast switching RoHS complaint Application . PDP System June 2007 tm General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. GC E TO-220F Absolute Maximum Ratings Symbol VCES VGES IC pulse(1)* PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation @ TC = 25oC @ TC = 25oC @ TC = 100oC Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.1 * Ic_pluse limited by max Tj Ratings 300 ±30 160 49.2 19.7 -55 to +150 -55 to +150 300 Typ. --- Max. 2.54 62.5 Units V V A W W oC oC oC Units oC/W oC/W ©2007 Fairchild Semiconductor Corporation FGPF70N30T Rev. A 1 www.fairchildsemi.com FGPF70N30T 300V, 70A PDP Trench IGBT Package Marking and Ordering Information Device Marking Device FGPF70N30T FGPF70N30TTU Package TO-220F Packaging Type Tube Electrical Characteristics TC = 25oC ...