A1309

■■APPLICATION：GENERAL PURPOSE APPLICATION. ■■MAXIMUM RATINGS（Ta＝25℃） PARAMETER SYMBOL RATING UNIT Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC PC TJ Tstg -30 V -25 V -5 V -100 mA 300 mW 150 ℃ ﹣55~150 ℃ A1309 —PNP silicon — ■■ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Common Emitter DC Current Gain hFE 400 VCE= -10V，Ic= -2mA Collector Cut-off Current ICBO -0.1 µA VCB= -30V，IE=0 Emitter Cut-off Current IEBO -0.1 µA VEB= -5V，Ic=0 Collector-Base Breakdown Voltage BVCBO -30 V Ic= -0.1mA，IE=0 Collector-Emitter Breakdown Voltage BVCEO -25 V Ic= -1mA，IB=0 Emitter-Base Breakdown Voltage BVEBO -5 V IE= -0.1mA，Ic=0 Collector-Emitter Saturation Voltage VCE(sat) -0.3 V Ic= -100mA，IB= -10mA Base-Emitter Saturation Voltage VBE(sat) -1.1 V Ic= -100mA, IB= -10mA Gain bandwidth product fT 40 MHz Ic= -1mA，VCE= -10V Common Base Output Capacitance Cob 4 7 PF VCB= -10V, IE=0, f = 1MHz Power Gain GP 1.0 10 dB VCE= -6V,Ic= -0.1mA,f= 1MHz,Rg=10K= ■■hFE Classification Classification hFE O ≥400 Y ...