HAT2028RJ

HAT2028R, HAT2028RJ Silicon N Channel Power MOS FET High Speed Power Switching Features For Automotive Application (at Type Code “J”) Low on-resistance Capable of 4 V gate drive High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 78 DD 56 DD 87 65 1234 24 GG S1 MOS1 S3 MOS2 REJ03G1163-0500 (Previous: ADE-208-524C) Rev.5.00 Sep 07, 2005 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain Rev.5.00 Sep 07, 2005 page 1 of 7 HAT2028R, HAT2028RJ Absolute Maximum Ratings Item Symbol Value Drain to source voltage Gate to source voltage VDSS VGSS 60 ±20 Drain current Drain peak current ID ID (pulse) Note 1 4 32 Body-drain diode reverse drain current Avalanche current HAT2028R IDR IAP Note 4 4 — Avalanche energy HAT2028RJ HAT2028R EAR Note 4 4 — Channel dissipation Channel dissipation HAT2028RJ Pch Note 2 Pch Note 3 1.37 2 3 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 4. Value at Tch = 25°C, Rg ≥ 50 Ω (Ta = 25°C) Unit V V A A A — A — mJ W W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain HAT2028R current HAT2028RJ Zero gate voltage drain HAT2028R curren...