J421

Ordering number:EN5077 Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. P-Channel Silicon MOSFET 2SJ421 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2116 [2SJ421] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg 0.595 1.27 0.43 Conditions PW≤10µs, duty cycle≤1% Mounted on ceramic board (1000mm2× 0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=–1mA, VGS=0 VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–5A ID=–5A, VGS=–10V ID=–2A, VGS=–4V 1 : Source 2 : Source 3 : Source 0.2 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 Ratings –30 ±20 –5 –32 2.0 150 –55 to +150 Unit V V A A W ˚C ˚C Ratings min typ max Unit –30 V –100 µA ±10 µA –1.0 –2.5 V 6 10 S 45 58 mΩ 65 107 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support syst...