TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2467
2SK2467
High-Power Amplifier Application
• High bre...
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
2SK2467
2SK2467
High-Power Amplifier Application
High breakdown voltage: VDSS = 180 V High forward transfer admittance: |Yfs| = 4.0 S (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS VGSS
ID PD Tch Tstg
180 ±20
9 80 150 −55 to 150
V V A W °C °C
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
Characteristics
Symbol
Test Condition
Drain cut-off current Gate leakage current Drain-source breakdown voltage Drain-source saturation voltage Gate-source cut-off voltage (Note 3) Forward transfer admittance In...