STP9434
P Channel Enhancement Mode MOSFET
- 7.2A
DESCRIPTION
STP9434 is the P-Channel logic enhancement mode power field...
STP9434
P Channel Enhancement Mode MOSFET
- 7.2A
DESCRIPTION
STP9434 is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION SOP-8
PART MARKING SOP-8
FEATURE
� -20V/-7.2A, RDS(ON) = 40mΩ @VGS = -4.5V
� -20V/-5.2A, RDS(ON) = 52mΩ @VGS = -2.5V
� -20V/-3.6A, RDS(ON) = 62mΩ @VGS = -1.8V
� Super high density cell design for extremely low RDS(ON)
� Exceptional on-resistance and maximum DC current capability
� SOP-8 package design
Y:Year Code A:Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STP9434 2010. V1
STP9434
P Channel Enhancement Mode MOSFET
- 7.2A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
VGSS ID
IDM
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
IS PD TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
-20...