IPD50R399CP

CoolMOSTM Power Transistor Features Lowest figure of merit RON x Qg Ultra low gate charge Extreme dv/dt rated High peak current capability Pb-free lead plating; RoHS compliant Quailfied according to JEDEC1) for target applications Product Summary VDS @Tjmax RDS(on),max Qg,typ IPD50R399CP 550 V 0.399  17 nC PG-TO252 CoolMOS CP is designed for: Hard and softswitching SMPS topologies DCM PFC for Lamp Ballast PWM for Lamp Ballast & PDP and LCD TV Type IPD50R399CP Package PG-TO252 Marking 5R399P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness I D,pulse E AS E AR I AR dv /dt T C=25 °C T C=100 °C T C=25 °C I D=3.3 A, V DD=50 V I D=3.3 A, V DD=50 V V DS=0...400 V Gate source voltage V GS static AC (f>1 Hz) Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg Value 9 6 20 215 0.33 3.3 50 ±20 ±30 83 -55 ... 150 Unit A mJ A V/ns V W °C Rev. 2.0 page 1 2007-11-21 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C IPD50R399CP Value 4.9 20 15 Unit A V/ns Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction ...