IPD50N06S3-15

OptiMOS®-T Power-Transistor Features N-channel - Normal Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested IPD50N06S3-15 Product Summary V DS R DS(on),max ID 55 V 15 mΩ 50 A PG-TO252-3-11 Type IPD50N06S3-15 Package Marking PG-TO252-3-11 3N0615 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse I D,pulse E AS I AS T C=25 °C I D=25 A Gate source voltage3) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 50 35 200 130 50 ±20 65 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.2 page 1 2009-05-20 IPD50N06S3-15 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area4) min. Values typ. Unit max. - - 2.3 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - Gate threshold voltage V GS(th) V DS=V GS, I D=30 µA 2.1 3.0 -V 4 Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V, T j=25 °C - 0.01 1 µA G...