OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C p...
OptiMOS®-T Power-
Transistor
Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested
IPD50N04S3-08
Product Summary V DS R DS(on),max ID
40 V 7.5 mΩ 50 A
PG-TO252-3-11
Type IPD50N04S3-08
Package
Marking
PG-TO252-3-11 3N0408
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=50 A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value 50
49
200 111 ±20 68 -55 ... +175 55/175/56
Unit A
mJ V W °C
Rev. 1.0
page 1
2007-05-03
IPD50N04S3-08
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 2.2 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
40
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=40 µA 2.1 3.0 4.0
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V, T j=25 °C
-
-
1 µA
Gate-source leakage current Drain-source on-state resistance
I...