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SC8205

FUMAN ELECTRONICS

20V N-channel enhancement mode MOS FET

SHENZHEN FUMAN ELECTRONICS CO., LTD. 5 SC8205 (:S&CIC0706) 20V N 6 MOS 20V N-Channel Enhancement-Mode MOSFET RDS(...


FUMAN ELECTRONICS

SC8205

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SHENZHEN FUMAN ELECTRONICS CO., LTD. 5 SC8205 (:S&CIC0706) 20V N 6 MOS 20V N-Channel Enhancement-Mode MOSFET RDS(ON), Vgs@1.8V, Ids@2.0A = 75mΩ RDS(ON), Vgs@2.5V, Ids@3.5A = 38mΩ RDS(ON), Vgs@4.0V, Ids@4.5A = 30mΩ RDS(ON), Vgs@4.5V, Ids@4.5A = 28mΩ RDS(ON), Vgs@10V, Ids@5.0A = 25mΩ D  4   、   :TSSOP-8/SOT-23-6 8205A/TSSOP-8 D1/D2 S1 S1 G1 1 2 3 4 1 8 D1/D2 7 S2 6 S2 5 G2 2 5 8205S/SOT-23-6 G1 NC G2 654 C 123 3 S1 D S2 4 Drain www.superchip.cn G at e1 Gate 2 Sour ce 1 Sour ce 2 N-Channel MOSFET 13 B Version 1.1 SHENZHEN FUMAN ELECTRONICS CO., LTD. SC8205 (:S&CIC0706) 20V N MOS (Ta = 25℃,。) TA = 25℃ TA = 75℃ VDS VGS ID IDM PD 20 V ±12 6 A 20 2 W 1.3 (PCB ) ::。 TJ, Tstg RθJA -55 to 150 62.5 ℃ ℃/W www.superchip.cn BVDSS VGS = 0V, ID = 250uA VGS = 1.8V,ID = 2.0A RDS(on) VGS = 2.5V,ID = 3.5A VGS = 4.0V,ID = 4.5A VGS = 4.5V,ID = 4.5A VGS = 10V,ID = 5.0A VGS(th) IDSS IGSS VDS = VGS, ID = 250uA VDS = 20V, VGS = 0V VGS = ±12V, ID=0uA gfs VDS = 15V, ID = 6.0A 23 20 --- 0.5 ---- -53.0 30.0 23.0 22.0 20.0 ---29 -75.0 38.0 30.0 28.0 25.0 1.5 1 ±100 -- V mΩ V uA nA S Version 1.1 SHENZHEN FUMAN ELECTRONICS CO., LTD. SC8205 (:S&CIC0706) 20V N MOS (On) (On) (Off) (Off) Qg Qgs VDS = 10V,ID = 6A VGS = 4.5V Qgd 6.24 8.11 1.64 2.13 nC 1.34 1.74 td(on) 10.4 20.8 tr td(off) VDD = 10V,ID = 6A ID = 1A,VGS = 4.5V 4.4 27.36 8.8 54.72 ns tf 4.16 8.32 Ciss -- 522.3 --...




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