20V N-channel enhancement mode MOS FET
SHENZHEN FUMAN ELECTRONICS CO., LTD.
5
SC8205 (:S&CIC0706)
20V N 6 MOS
20V N-Channel Enhancement-Mode MOSFET
RDS(...
Description
SHENZHEN FUMAN ELECTRONICS CO., LTD.
5
SC8205 (:S&CIC0706)
20V N 6 MOS
20V N-Channel Enhancement-Mode MOSFET
RDS(ON), Vgs@1.8V, Ids@2.0A = 75mΩ RDS(ON), Vgs@2.5V, Ids@3.5A = 38mΩ RDS(ON), Vgs@4.0V, Ids@4.5A = 30mΩ RDS(ON), Vgs@4.5V, Ids@4.5A = 28mΩ RDS(ON), Vgs@10V, Ids@5.0A = 25mΩ
D
4
、
:TSSOP-8/SOT-23-6
8205A/TSSOP-8
D1/D2 S1 S1 G1
1 2 3 4
1
8 D1/D2 7 S2 6 S2 5 G2
2
5
8205S/SOT-23-6
G1 NC G2
654
C
123
3
S1 D S2
4
Drain
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G at e1
Gate 2
Sour ce 1
Sour ce 2
N-Channel MOSFET
13
B Version 1.1
SHENZHEN FUMAN ELECTRONICS CO., LTD.
SC8205 (:S&CIC0706)
20V N MOS
(Ta = 25℃,。)
TA = 25℃ TA = 75℃
VDS VGS ID IDM
PD
20 V
±12
6 A
20
2 W
1.3
(PCB ) ::。
TJ, Tstg RθJA
-55 to 150 62.5
℃ ℃/W
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BVDSS
VGS = 0V, ID = 250uA VGS = 1.8V,ID = 2.0A
RDS(on)
VGS = 2.5V,ID = 3.5A VGS = 4.0V,ID = 4.5A VGS = 4.5V,ID = 4.5A VGS = 10V,ID = 5.0A
VGS(th) IDSS IGSS
VDS = VGS, ID = 250uA VDS = 20V, VGS = 0V VGS = ±12V, ID=0uA
gfs VDS = 15V, ID = 6.0A
23
20 ---
0.5 ----
-53.0 30.0 23.0 22.0 20.0
---29
-75.0 38.0 30.0 28.0 25.0 1.5
1 ±100
--
V
mΩ
V uA nA S
Version 1.1
SHENZHEN FUMAN ELECTRONICS CO., LTD.
SC8205 (:S&CIC0706)
20V N MOS
(On) (On) (Off) (Off)
Qg
Qgs
VDS = 10V,ID = 6A VGS = 4.5V
Qgd
6.24 8.11 1.64 2.13 nC 1.34 1.74
td(on)
10.4 20.8
tr td(off)
VDD = 10V,ID = 6A ID = 1A,VGS = 4.5V
4.4 27.36
8.8 54.72
ns
tf 4.16 8.32
Ciss
--
522.3
--...
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