ISB-A40-0

Ordering number : EISB*0008 Ultrathin Miniature Package ISB-A40-0 Reverse-Current Flow Prevention for a Cell Phone Charger Circuit SBD×4 Overview The ISB-A40-0 incorporates four chips of schottky barrier diodes that are necessary for preventing reverse-current flow in charger circuits. This IC is optimal for high-density mounting and miniaturization of electronic products. Applications Battery charger circuit for portable electronic devices Features Incorporates two chips of 30V/1A and 30V/200mA, respectively. Miniature package makes this IC ideal for miniaturization of electronic devices and high-density mounting. Specifications Maximum Ratings at Ta = 25°C Internal Device Parameter Symbol Conditions D1, D2 Repetitive peak reverse voltage VRRM Average output current IO D3, D4 Repetitive peak reverse voltage VRRM Average output current Allowable power dissipation IO PD-D1, 2 * PD-D3, 4 * Storage ambient temperature Tstg * Value of an element when mounted on a 40mm×40mm×1.0mm FR4 specified board. Ratings 30 1.0 30 200 0.55 0.4 -40 to +125 Unit V A V mA W W °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose...