N-CHANNEL MOSFET
R JCS2N60C
JCS2N60C
MAIN CHARACTERISTICS
ID 2.0 A VDSS 600 V Rdson(Vgs=10V) 4.5 Ω Qg 8 nC
Package
LED
...
Description
R JCS2N60C
JCS2N60C
MAIN CHARACTERISTICS
ID 2.0 A VDSS 600 V Rdson(Vgs=10V) 4.5 Ω Qg 8 nC
Package
LED
Crss ( 3.8pF) dv/dt RoHS
APPLICATIONS High efficiency switch
mode power supplies Electronic lamp ballasts
based on half bridge LED power supplie
FEATURES Low gate charge Low Crss (typical 3.8pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product
ORDER MESSAGE
Order codes
Marking
JCS2N60TC-O-T-N-B JCS2N60VC-O-V-N-B JCS2N60RC-O-R-N-B JCS2N60CC-O-C-N-B JCS2N60FC-O-F-N-B JCS2N60FC-O-F2-N -B
JCS2N60T JCS2N60V JCS2N60R JCS2N60C JCS2N60F JCS2N60F
Package
TO-92 IPAK DPAK TO-220C TO-220MF TO-220MF -K2
Halogen Free Packaging
NO NO NO NO NO NO
Brede Tube Tube Tube Tube Tube
Device Weight 0.22 g(typ) 0.35 g(typ) 0.30 g(typ) 2.15 g(typ) 2.20 g(typ) 2.20 g(typ)
:201502D
1/15
R
ABSOLUTE RATINGS (Tc=25℃)
JCS2N60C
Parameter
Symbol
JCS2N60 VC/RC
Value JCS2N60 JCS2N60
CC FC
JCS2N60 TC
-
VDSS
Drain-Source Voltage
600
Drain Current-continuous
ID T=25℃ T=100℃
1.9 1.1
2.0 1.3
2.0* 1.3*
(
1)
Drain Current – pulse (note 1)
IDM
6.0
6.0*
Gate-Source Voltage VGSS
±30
( 2)
Single Pulsed Avalanche Energy(note 2)
EAS
110
( 1)
Avalanche Current (note 1)
IAR
1.9
( 1)
Repetitive Avalanche EAR Current (note 1)
4.2
( 3) Peak Diode Recovery dv/dt (note 3)
dv/dt
4.6
Power Dissipation
PD TC=25℃ -Derate
above 25℃
44 0.35
54 23 4 0.43 0.18 0.025
Operating and S...
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