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3DD164

Low-power silicon NPN transistor

Description

3DD164 NPN PCM ICM Tjm Tstg Rth V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO VBEsat VCEsat hFE TC=75℃ VCE=10V IC=3A ICB=5mA ICE=5mA IEB=5mA VCB=50V VCE=50V VEB=4V IC=5A IB=1A VCE=5V IC=5A ABCDE FG 100 10 175 -55~150 1 ≥80 ≥150 ≥200 ≥250 ≥350 ≥400 ≥600 ≥50 ≥100 ≥150 ≥200 ≥250 ≥300 ≥400 ≥5.0 ≤1.5 ≤2.0 ≤1.5 ≤1.8 ≤1.5 15~180 W A ℃ ℃ ℃/W V V V mA ...

ETC

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