W9NA60

STW9NA60 ® STH9NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW 9NA60 S TH9NA 60F I V DSS 600 V 600 V RDS(on) < 0.8 Ω < 0.8 Ω ID 9.5 A 6.4 A s TYPICAL RDS(on) = 0.69 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE 23 1 TO-247 3 2 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Sy mb o l P a ramet er VDS Drain-source Voltage (VGS = 0) VDGR Drain- gate Voltage (RGS = 20 kΩ) VGS G ate-source Volt age ID Drain Current (continuous) at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC IDM () Ptot Drain Current (pulsed) T otal Dissipat ion at Tc = 25 oC Derating Factor VISO I nsulation W ithstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature () Pulse width limited by safe operating area October 1998 Va l u e ST W9NA60 STH9NA60F I 600 600 ± 30 6.4 9.5 46 38 38 70 160 0.56 1.28  4000 -65 to 150 150 Un it V V V A A A W W /o C V oC oC 1/10 STW9NA60-STH9NA60FI THERMAL DATA Rthj-case R th j -a mb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Sold...