IPP80P03P3L-04

Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS-P Power-Transistor Feature P-Channel Enhancement mode Logic Level Automotive AEC Q101 qualified P- TO262 -3-1 Product Summary VDS -30 V RDS(on) max. SMD version 4 mΩ ID -80 A P- TO263 -3-2 P- TO220 -3-1 Green package (lead free) MSL1 up to 260°C peak reflow temperature 175°C operating temperature Avalanche rated dv/dt rated Type IPP80P03P3L-04 Package Ordering Code P- TO220 -3-1 - Marking 3P03L04 Gate pin1 Drain pin 2 Source pin 3 IPB80P03P3L-04 P- TO263 -3-2 - 3P03L04 IPI80P03P3L-04 P- TO262 -3-1 - 3P03L04 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C TC=100°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=-80 A , VDD=-25V, RGS=25Ω ID ID puls EAS Reverse diode dv/dt dv/dt IS=-80A, VDS=-24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage VGS Power dissipation TC=25°C Ptot Operating and storage temperature IEC climatic category; DIN IEC 68-1 Tj , Tstg Value -80 -80 -320 432 -6 ±20 200 -55... +175 55/175/56 Unit A mJ kV/µs V W °C Page 1 2004-03-04 Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Symbol Values Unit min. typ. max. RthJC RthJA Rt...