SLC NAND flash memories
NAND512xxA2D
512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories
Features
High density SLC NAND flas...
Description
NAND512xxA2D
512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories
Features
High density SLC NAND flash memories
– 512 Mbit memory array
– Cost effective solutions for mass storage applications
NAND interface
– x8 or x16 bus width
– Multiplexed address/data Supply voltage: 1.8 V, 3 V Page size
– x8 device: (512 + 16 spare) bytes
– x16 device: (256 + 8 spare) words Block size
– x8 device: (16 K + 512 spare) bytes
– x16 device: (8 K + 256 spare) words Page read/program
– Random access: 12 µs (3 V)/15 µs (1.8 V) (max)
– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)
– Page program time: 200 µs (typ) Copy back program mode Fast block erase: 1.5 ms (typ) Status register Electronic signature Chip Enable ‘don’t care’ Hardware data protection: program/erase
locked during power transitions Security features
– OTP area
TSOP48 12 x 20 mm (N)
FBGA
VFBGA63 9 x 11 x 1.05 mm (ZA)
– Serial number (unique ID) Data integrity
– 100,000 program/erase cycles (with ECC)
– 10 years data retention RoHS compliant packages Development tools
– Error correction code models
– Bad blocks management and wear leveling algorithms
– Hardware simulation models
Table 1.
Device summary NAND512xxA2D
NAND512R3A2D NAND512R4A2D NAND512W3A2D NAND512W4A2D
July 2010
210217 - Rev 9
1/52
www.numonyx.com
1
Contents
Contents
NAND512xxA2D
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2 Memory a...
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