NAND512W3A2D

NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features „ High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications „ NAND interface – x8 or x16 bus width – Multiplexed address/data „ Supply voltage: 1.8 V, 3 V „ Page size – x8 device: (512 + 16 spare) bytes – x16 device: (256 + 8 spare) words „ Block size – x8 device: (16 K + 512 spare) bytes – x16 device: (8 K + 256 spare) words „ Page read/program – Random access: 12 µs (3 V)/15 µs (1.8 V) (max) – Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min) – Page program time: 200 µs (typ) „ Copy back program mode „ Fast block erase: 1.5 ms (typ) „ Status register „ Electronic signature „ Chip Enable ‘don’t care’ „ Hardware data protection: program/erase locked during power transitions „ Security features – OTP area TSOP48 12 x 20 mm (N) FBGA VFBGA63 9 x 11 x 1.05 mm (ZA) – Serial number (unique ID) „ Data integrity – 100,000 program/erase cycles (with ECC) – 10 years data retention „ RoHS compliant packages „ Development tools – Error correction code models – Bad blocks management and wear leveling algorithms – Hardware simulation models Table 1. Device summary NAND512xxA2D NAND512R3A2D NAND512R4A2D NAND512W3A2D NAND512W4A2D July 2010 210217 - Rev 9 1/52 www.numonyx.com 1 Contents Contents NAND512xxA2D 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2 Memory a...