W33N20

STW33N20 N - CHANNEL ENHANCEMENT MODE POWER MOSFET TYPE ST W33N20 VDSS 200 V RDS(on) < 0.085 Ω ID 33 A s TYPICAL RDS(on) = 0.073 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100 oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 150 oC OPERATING TEMPERATURE s APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC CONVERTERS & DC-AC INVERTERS s TELECOMMUNICATION POWER SUPPLIES s INDUSTRIAL MOTOR DRIVES 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain- gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage ID Drain Current (continuous) at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC IDM() Ptot Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor Tstg St orage Temperature Tj Max. Operating Junction Temperature () Pulse width limited by safe operating area October 1997 Value 200 200 ± 20 33 20 132 180 1.44 -65 to 150 150 Uni t V V V A A A W W/oC oC oC 1/9 STW33N20 THERMAL DATA Rt hj-ca se Rt hj- amb Rthc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.66 30 0.1 300 oC/ W oC/W oC/ W oC AVALANCHE CHARACTERISTICS S ymb ol IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj ma...