EMF5

General purpose transistors (dual transistors) EMF5 FEATURES z 2SA2018 and DTC144E are housed independently in a package. z Mounting possible with SOT-563 automatic mounting machines. z Transistor elements are independent, eliminating interference. z Mounting cost and area be cut in half. Marking: F5 Equivalent circuit (3) (2) (1) DTr2 R1 R2 (4) (5) Tr1 (6) SOT-563 1 Tr1 Absolute maximum ratings (Ta=25℃) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -15 -12 -6 -500 150 150 -55-150 Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test conditions V(BR)CBO IC=-10μA, IE=0 V(BR)CEO IC=-1mA, IB=0 V(BR)EBO IE=-10μA, IC=0 ICBO VCB=-15V, IE=0 IEBO VEB=-6V, IC=0 hFE VCE=-2V, IC=-10mA VCE(sat) IC=-200mA, IB=-10mA fT VCE=-2V, IE=-10mA, f=100MHz Cob VCB=-10V, IE=0, f=1MHz Min Typ Max Unit -15 V -12 V -6 V -0.1 μA -0.1 μA 270 680 -0.25 V 260 MHz 6.5 pF 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 EMF5 Tr2 Absolute maximum ratings(Ta=25℃) Parameter Supply voltage Input voltage Ou...