FMMTA63

SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 2 – MARCH 1995 7 PARTMARKING DETAIL – FMMTA63 - Z2U FMMTA64 - Z2V COMPLEMENTARY TYPES – FMMTA63 - FMMTA13 FMMTA64 - FMMTA14 FMMTA63 FMMTA64 E C B ABSOLUTE MAXIMUM RATINGS. SOT23 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Peak Pulse Current ICM Continuous Collector Current IC Peak Base Current IBM Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL FMMTA63 FMMTA64 -30 -30 -10 -800 -500 -200 330 -55 to +150 V V V mA mA mA mW °C UNIT CONDITIONS. MIN. MAX. MIN. MAX. Collector-Base V(BR)CBO -30 -30 V IC=-10µA, IE=0 Breakdown Voltage Collector-Emitter V(BR)CEO -30 -30 V IC=-10mA, IB=0* Breakdown Voltage Emitter-Base V(BR)EBO -10 -10 V IE=-10µA, IC=0 Breakdown Voltage Collector Cut-Off Current ICBO -0.1 -0.1 µA VCB=-30V, IE=0 Emitter Cut-Off Current IEBO -0.1 -0.1 µA VCE=-10V Static Forward hFE Current Transfer Ratio Collector-Emitter Saturation Voltage VCE(sat) 5K 10K 10K 20K -1.5 -1.5 V IC=-10mA, VCE=5V* IC=-100mA, VCE=5V* IC=-100mA, IB=-0.1mA* Base-Emitter Saturation Voltage VBE(sat) -2.0 -2.0 V IC=-100mA, IB=-0.1mA* Transition Frequency fT 125 125 MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FZTA63 datasheet. IC=-50mA, VCE...