JS29F08G08CANB2

Intel® SD74 NAND Flash Memory JS29F04G08AANB1, JS29F08G08CANB2, JS29F16G08FANB1 Product Features Datasheet „ Single-level cell (SLC) Technology „ Organization: — Page size: x8: 2,112 bytes (2,048 + 64 bytes) — Block size: 64 pages (128K + 4K bytes) — Plane size: 2,048 blocks — Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks; 16Gb: 16,384 blocks „ Read performance: — Random read: 25µs (MAX) — Sequential read: 25ns (MIN) „ Write performance: — Page program: 220µs (TYP) „ Block erase: 1.5ms (TYP) „ Data Retention: — 10 years „ Endurance: — 100,000 PROGRAM/ERASE cycles „ First block (block address 00h): — Guaranteed to be valid up to 1,000 PROGRAM/ERASE cycles „ Vcc: — 2.7V – 3.6V „ Operating Temperature: — -25 oC to 85 oC „ Command set: — Industry-standard basic NAND Flash command set „ Advanced Command Set: — Two-plane commands — Interleaved die operation — READ UNIQUE ID (contact factory) — Internal Data Move: Operations supported within the plane from which data is read „ Operation status byte: — Provides software method for detecting: — Operation completion — Pass/fail condition — Write-protect status „ Ready/busy# (R/B#) signal: — Provides a hardware method for detecting PROGRAM or ERASE cycle completion „ WP# signal: — Write protect entire device „ RESET: — Required after power-up „ Package Types: — 48-pin TSOP Type 1 „ Configuration: # of Die 1 2 4 # of CE# # of R/B# 11 22 22 I/O Common Common Common Order Number: 312774-012US March 2007 INFORMATIONLegal Lines a...