Dual N & P-Channel PowerTrench MOSFET
MOS-TECH Semiconductor Co.,LTD
MT4607
30V Complementary Power MOSFET
General Description
This complementary MOSFET devi...
Description
MOS-TECH Semiconductor Co.,LTD
MT4607
30V Complementary Power MOSFET
General Description
This complementary MOSFET device is produced using Mos-tech’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Applications
DC/DC converter Power management
Features
Q1: N-Channel
7 A, 30 V
RDS(on) = 28 mΩ @ VGS = 10V RDS(on) = 40 mΩ @ VGS = 4.5V
Q2: P-Channel
–7 A, –30 V
RDS(on) = 25 mΩ @ VGS = –10V RDS(on) = 36 mΩ @ VGS = –4.5V
DD1DD2DD2 DD1
SO-8
Pin 1 SO-8
SS1GS1SS2GG2
Q2
5
6
Q1
7
8
4 3 2 1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGSS ID PD
TJ, TSTG
Drain-Source Voltage Gate-Source Voltage
Drain Current - Continuous - Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
The...
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