2SC1675

ST 2SC1675 NPN Silicon Epitaxial Planar Transistor FM/AM RF AMP, MIX, CONV, OSC, IF The transistor is subdivided into three groups, R, O, Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. FEATURES: Collector-Base Voltage: VCEO=30V High Current Gain Bandwidth Product: fT=300MHz (TYP.) Low Collector Capacitance: COB=2.0pF (TYP.) Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 50 30 5 50 250 150 -55 to +150 G S P FORM A IS AVAILABLE Unit V V V mA mW ? ? РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: www.rct.ru ® ST 2SC1675 Characteristics at Ta=25 OC DC Current Gain at VCE=6V, IC=1mA Symbol Min. R hFE 40 O hFE 70 Y hFE 120 Collector-Emitter Saturation Voltage at IC=10mA, IB=1mA Base–Emitter On Voltage at VCE=6V, IC=1mA Collector-Base Breakdown Voltage at IC=10µA, IE=0 Collector-Emitter Breakdown Voltage at IC=5mA, IB=0 Emitter-Base Breakdown Voltage at IE=10µA, IC=0 Collector Cut-off Current at VCB=50V, IE=0 Emitter Cut-off Current at VEB=5V, IC=0 Current Gain Bandwidth Product at VCE=6V,IC=1mA Output Capacitance at VCB=6V, IE=0, f=1MHz VCE(sat) VBE(on)...