MIP3J20MS

MIP3J20MS Type Application Structure Equivalent Circuit Package Silicon MOSFET type Integrated Circuit Switching Power Supply Control CMOSType Refer Figure 9 DIP7-A1 Marking MIP3J2 A．ABSOLUTE MAXIMUM RATINGS (Ta= 25°C±3°C) NO. Item Symbol 1 DRAIN Voltage 2 VCC Voltage 3 VDD Voltage 4 TR Voltage 5 TR Current 6 Output Peak Current 7 RecommendedOperating Temperature 8 Channel Temperature 9 Storage Temperature VD VCC VDD VTR ITRrev IDP Ｔj Tch Tstg Ratings –0.3 to 700 –0.3 to 45 –0.3 to 8 –0.7 to VDD + 0.5 –5 to 0.6 0.6(*1) –30 to +125 –30 to +150 55 to +150 Unit Note V *1： It is guaranteed within the pulse as below. V Leading Edge Blanking Pulse + Over current V protection delay V ton(BLK)＋td(OCL) mA A °C °C °C Publication date: March 2013 Ver. AEF Page 1 of 9 MIP3J20MS B．ELECTRICAL CHARACTERISTICS (continued) Measure condition (Tc= 25°C±3°C) No. Item Symbol Measure Condition Typ. Min. Max. Unit 1 Highest PFM output frequency at heavy load *2 Jitter Frequency Deviation at heavy load *3 Jitter Frequency Modulation Rate *4 PWM output frequency 5 Lowest PFM output frequency at light load 6 Lowest output frequency at overload protection 7 Secondary current duty ratio at contant current control *8 Secondary current duty jitter at contant current control 9 Voltage reference for constant voltage control 10 TR feedback voltage threshold 11 TR lowest voltage detection 12 VCC start voltage 13 VCC stop voltage 14 VDD start voltage 15 VDD stop voltage 16 S...