Document
Power Transistors
2SD1890
Silicon NPN triple diffusion planar type Darlington
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Productnnu
14.0±0.5aendc Solder Dip 4.0
lifecycle stage.
For power amplification Complementary to 2SB1250
s Features
q Optimum for 25W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <2.5V q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO VCEO VEBO ICP IC
PC
Tj Tstg
100 80 5 6 3 35 2 150 –55 to +150
Unit V V V A A
W
˚C ˚C
16.7±0.3e/ 7.5±0.2
0.7±0.1
10.0±0.2 5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
4.2±0.2
φ3.1±0.1
1.3±0.2 1.4±0.1
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C B
E
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf
VCB = 100V, IE = 0 VCE = 80V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 2A IC = 2A, IB = 2mA IC = 2A, IB = 2mA VCE = 10V, IC = 0.5A, f = 1MHz
IC = 2A, IB1 = 2mA, IB2 = –2mA, VCC = 50V
*hFE2 Rank classification
Rank
Q
P
hFE2 5000 to 15000 8000 to 30000
min
80 2000 5000
typ max Unit 100 µA 100 µA 100 µA V
30000 2.5 V 3.0 V
20 MHz 3.5 µs 2.5 µs 0.6 µs
1
CollectorcatooemitterinsaturationnttvoltageienVCE(sat)nu(V)aendc
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Collector current IC (A) Base to emitter saturation voltage VBE(sat)
stage.
Collectorepower/ dissipation PC (W)
Power Transistors
40 (1)
35 30 25
PC — Ta
(1) TC=Ta (2) With a 100 × 100 × 2mm
Al heat sink (3) With a 50 × 50 × 2mm
Al heat sink (4) Without heat sink
(PC=2W)
20
15
(2) 10
(3) 5
(4) 0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
100 IC/IB=1000
30
10 TC=100˚C 25˚C
3 –25˚C
1
0.3
0.1 0.1
0.3 1 3 10 30
Collector current IC (A)
100
ton, tstg, tf — IC
100 Pulsed tw=1ms Duty cycle=1%
30 IC/IB=1000 (IB1=–IB2) VCC=50V
10 TC=25˚C
ton 3
tstg 1
tf 0.3
0.1
0.03
0.01 0
246
Collector current IC (A)
8
IC — VCE
6 TC=25˚C
5
4 IB=3mA 0.5mA
3 0.4mA
0.3mA 2 0.2mA
1 0.1mA
0 0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
(V)
2SD1890
VBE(sat) — IC
100 IC/IB=1000
30
10
3 TC=–25˚C
1 100˚C 25˚C
0.3
0.1 0.1
0.3 1 3 10 30
Collector current IC (A)
100
lifecycle
100000 30000 10000
hFE — IC
VCE=5V
3000 TC=100˚C
1000
300 25˚C
100 –25˚C
30
10 0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000 300 100
Cob — VCB
IE=0 f=1MHz TC=25˚C
30 10
3
1
1
3
10 30
100
Collector to base voltage VCB (V)
Area of safe operation (ASO)
100 Non repetitive pulse TC=25˚C
30
10 ICP 3 IC 1
0.3
t=1ms
10ms DC
0.1
0.03
0.01 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Switching time ton,tstg,tf (µs) DisM
2
Power Transistors
10000 1000
Rth(t) — t
Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
100 (1)
10 (2)
1
0.1 10–4
10–3
10–2
10–1
1
Time t (s)
10
Thermal resistance Rth(t) (˚C/W)
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102 103
104
2SD1890
3
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