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2SD1890 Dataheets PDF



Part Number 2SD1890
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD1890 Datasheet2SD1890 Datasheet (PDF)

Power Transistors 2SD1890 Silicon NPN triple diffusion planar type Darlington Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttie Productnnu 14.0±0.5aendc Solder Dip 4.0 lifecycle stage. For power amplification Complementary to 2SB1250 s Features q Optimum for 25W HiFi output q High foward current transfer ratio hFE: 5000 to 3.

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Power Transistors 2SD1890 Silicon NPN triple diffusion planar type Darlington Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttie Productnnu 14.0±0.5aendc Solder Dip 4.0 lifecycle stage. For power amplification Complementary to 2SB1250 s Features q Optimum for 25W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <2.5V q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg 100 80 5 6 3 35 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 16.7±0.3e/ 7.5±0.2 0.7±0.1 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.3±0.2 1.4±0.1 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 123 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) Internal Connection C B E s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf VCB = 100V, IE = 0 VCE = 80V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 2A IC = 2A, IB = 2mA IC = 2A, IB = 2mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 2A, IB1 = 2mA, IB2 = –2mA, VCC = 50V *hFE2 Rank classification Rank Q P hFE2 5000 to 15000 8000 to 30000 min 80 2000 5000 typ max Unit 100 µA 100 µA 100 µA V 30000 2.5 V 3.0 V 20 MHz 3.5 µs 2.5 µs 0.6 µs 1 CollectorcatooemitterinsaturationnttvoltageienVCE(sat)nu(V)aendc CollectPlorehctautrsrpe:e/nM/tvaiiwIsCniwtt(efwA.n)olsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.CeujaniouesleplFctn/deodtierceettenwtosnfyran/yrfopodapruoetclnelpumdcruortaeetcwintitaoytpnranpag.cinetfsafonercureratiPoCrobohF(dEpuF)ct Collector current IC (A) Base to emitter saturation voltage VBE(sat) stage. Collectorepower/ dissipation PC (W) Power Transistors 40 (1) 35 30 25 PC — Ta (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 20 15 (2) 10 (3) 5 (4) 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) VCE(sat) — IC 100 IC/IB=1000 30 10 TC=100˚C 25˚C 3 –25˚C 1 0.3 0.1 0.1 0.3 1 3 10 30 Collector current IC (A) 100 ton, tstg, tf — IC 100 Pulsed tw=1ms Duty cycle=1% 30 IC/IB=1000 (IB1=–IB2) VCC=50V 10 TC=25˚C ton 3 tstg 1 tf 0.3 0.1 0.03 0.01 0 246 Collector current IC (A) 8 IC — VCE 6 TC=25˚C 5 4 IB=3mA 0.5mA 3 0.4mA 0.3mA 2 0.2mA 1 0.1mA 0 0 2 4 6 8 10 12 Collector to emitter voltage VCE (V) (V) 2SD1890 VBE(sat) — IC 100 IC/IB=1000 30 10 3 TC=–25˚C 1 100˚C 25˚C 0.3 0.1 0.1 0.3 1 3 10 30 Collector current IC (A) 100 lifecycle 100000 30000 10000 hFE — IC VCE=5V 3000 TC=100˚C 1000 300 25˚C 100 –25˚C 30 10 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10 1000 300 100 Cob — VCB IE=0 f=1MHz TC=25˚C 30 10 3 1 1 3 10 30 100 Collector to base voltage VCB (V) Area of safe operation (ASO) 100 Non repetitive pulse TC=25˚C 30 10 ICP 3 IC 1 0.3 t=1ms 10ms DC 0.1 0.03 0.01 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Switching time ton,tstg,tf (µs) DisM 2 Power Transistors 10000 1000 Rth(t) — t Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 Time t (s) 10 Thermal resistance Rth(t) (˚C/W) DiMscaoinntteinnuaendce/PlehattspMe://avwiisnwittwefno.sallenomcweiicn/pDogdlnaiisUs.npccReoaodLnnntapdtamiinslnibasuaouonceinenuoedidtctnde.ilttcnnaimynocatpeua.lnuejsepicndtd/eteeientnstynfy/opafporenemldlcoaewtitioynnpg.efour Product lifecycle stage. 102 103 104 2SD1890 3 Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttieProductnnulifecycleaenstage.dce/ Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be obse.


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