Power MOSFET
AUTOMOTIVE GRADE
Features
l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C O...
Description
AUTOMOTIVE GRADE
Features
l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
D G
S
D
PD - 96342
AUIRFR5505
AUIRFU5505
HEXFET® Power MOSFET
V(BR)DSS
-55V
RDS(on) max. 0.11Ω
ID -18A
D
Description
Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other
applications.
S D G
D-Pak AUIRFR5505
S GD
I-Pak AUIRFU5505
G Gate
D Drain
S Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter...
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