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MBRF30H100CT Dataheets PDF



Part Number MBRF30H100CT
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Switch-mode Power Rectifier
Datasheet MBRF30H100CT DatasheetMBRF30H100CT Datasheet (PDF)

Switch‐mode Power Rectifier 100 V, 30 A MBR30H100CTG, MBRF30H100CTG Features and Benefits • Low Forward Voltage: 0.67 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 30 A Total (15 A Per Diode Leg) • These are Pb−Free Devices Applications • Power Supply − Output Rectification • Power Management • Instrumentation Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight: 1.9 Grams (Approximately) • Finis.

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Switch‐mode Power Rectifier 100 V, 30 A MBR30H100CTG, MBRF30H100CTG Features and Benefits • Low Forward Voltage: 0.67 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 30 A Total (15 A Per Diode Leg) • These are Pb−Free Devices Applications • Power Supply − Output Rectification • Power Management • Instrumentation Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • ESD Rating: Human Body Model = 3B Machine Model = C www.onsemi.com SCHOTTKY BARRIER RECTIFIER 30 AMPERES 100 VOLTS 1 2, 4 3 MARKING DIAGRAMS 4 1 2 3 TO−220 CASE 221A STYLE 6 AYWW B30H100G AKA TO−220 FULLPAK CASE 221D AYWW B30H100G AKA 1 2 3 A = Assembly Location Y = Year WW = Work Week B30H100 = Device Code G = Pb−Free Package AKA = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 1 July, 2020 − Rev. 7 Publication Order Number: MBR30H100CT/D MBR30H100CTG, MBRF30H100CTG MAXIMUM RATINGS (Per Diode Leg) Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 156°C) Per Diode Per Device Symbol VRRM VRWM VR IF(AV) Value 100 15 30 Unit V A Peak Repetitive Forward Current (Square Wave, 20 kHz, TC = 151°C) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFM 30 A IFSM 250 A Operating Junction Temperature (Note 1) Storage Temperature Voltage Rate of Change (Rated VR) Controlled Avalanche Energy (see test conditions in Figures 13 and 14) ESD Ratings: Machine Model = C Human Body Model = 3B TJ Tstg dv/dt WAVAL +175 *65 to +175 10,000 200 > 400 > 8000 °C °C V/ms mJ V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance (MBR30H100CTG) − Junction-to-Case − Junction-to-Ambient (MBRF30H100CTG) − Junction-to-Case − Junction-to-Ambient Symbol RqJC RqJA RqJC RqJA Value 2.0 60 4.2 75 Unit °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Min Typ Max Unit Maximum Instantaneous Forward Voltage (Note 2) (iF = 15 A, TJ = 25°C) (iF = 15 A, TJ = 125°C) (iF = 30 A, TJ = 25°C) (iF = 30 A, TJ = 125°C) vF V − 0.76 0.80 − 0.64 0.67 − 0.88 0.93 − 0.76 0.80 Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TJ = 125°C) (Rated DC Voltage, TJ = 25°C) iR mA − 1.1 6.0 − 0.0008 0.0045 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Device Order Number MBR30H100CTG MBRF30H100CTG Package Type TO−220 (Pb−Free) TO−220FP (Pb−Free) Shipping† 50 Units / Rail 50 Units / Rail www.onsemi.com 2 i F, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR30H100CTG, MBRF30H100CTG 100 100 i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 175°C 10 175°C TJ = 150°C 1.0 125°C TJ = 150°C 1.0 125°C 25°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 25°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 2. Maximum Forward Voltage IR, MAXIMUM REVERSE CURRENT (AMPS) IR, REVERSE CURRENT (AMPS) IF (AV), AVERAGE FORWARD CURRENT (AMPS) 1E−01 1E−02 1E−03 1E−04 1E−05 1E−06 1E−07 1E−08 0 TJ = 150°C TJ = 125°C TJ = 25°C 20 40 60 80 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current 1E−01 1E−02 1E−03 1E−04 1E−05 1E−06 1E−07 1E−08 100 0 TJ = 150°C TJ = 125°C TJ = 25°C 20 40 60 80 100 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Maximum Reverse Current 26 24 dc 22 20 18 SQUARE WAVE 16 14 12 10 8.0 6.0 4.0 2.0 0 130 135 140 145 150 155 160 165 170 175 180 TC, CASE TEMPERATURE (C°) Figure 5. Current Derating, Case Per Leg I F (AV), AVERAGE FORWARD CURRENT (AMPS) 26 24 22 20 18 16 14 12 10 8.0 SQUARE WAVE 6.0 4.0 2.0 0 0 25 50 dc dc 75 RATED VOLTAGE APPLIED RqJA = 16° C/W RqJA = 60° C/W (NO HEATSINK) 100 125 .


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