EMB4

General purpose transistors (dual digital transistors) EMB4 FEATURES z Two DTA114T chips in a package Marking: B4 Equivalent circuit (3) (2) (1) R1 R1 (4) (5) (6) SOT-563 1 Absolute maximum ratings (Ta=25℃) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Intput resistance Symbol Test conditions V(BR)CBO IC=-50μA, IE=0 V(BR)CEO IC=-1mA, IB=0 V(BR)EBO IE=-50μA, IC=0 ICBO VCB=-50V, IE=0 IEBO VEB=-4V, IC=0 hFE VCE=-5V, IC=-1mA VCE(sat) IC=-10mA, IB=-1mA fT VCE=-10V, IC=-5mA, f=100MHz R1 - Value -50 -50 -5 -100 150 150 -55-150 Units V V V mA mW ℃ ℃ Min Typ Max Unit -50 V -50 V -5 V -0.5 μA -0.5 μA 100 600 -0.3 V 250 MHz 7 13 Ω 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 ...