DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SA950
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low-frequency power amplifier applications.
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collec...
