2SA950

ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a=25oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS G S P FORM A IS AVAILABLE Value 35 30 5 800 160 600 150 -55 to +150 Unit V V V mA mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: www.rct.ru ® ST 2SA950 Characteristics at Tamb=25 OC Symbol Min. Typ. DC Current Gain at -VCE=1V, -IC=100mA Current Gain Group O Y at -VCE=1V, -IC=700mA hFE hFE hFE Collector Cutoff Current at -VCB=35V -ICBO Emitter Cutoff Current at -VEB=5V -IEBO Collector Emitter Breakdown Voltage at -IC=10mA -V(BR)CEO Collector Emitter Saturation Voltage at -IC=500mA, -IB=20mA -VCE(sat) Base Emitter Voltage at –VCE=1V,-IC=10mA -VBE Transition Frequency at -VCE=5V, -IC=10mA fT Collector Output Capacitance at -VCB=10V, f=1MHz COB 100 160 35 - 30 - 0.5 - - 120 19 G S P FORM A IS AVAILABLE Max. 200 320 0.1 0.1 0.7 0.8 - Unit µA µA V V V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, acompany ® l...