HBN2412S6R

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBN2412S6R Spec. No. : C202S6R Issued Date : 2003.06.11 Revised Date : 2006.01.19 Page No. : 1/5 Features Two BTC2412 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. Low Cob. Typ. Cob=2.0pF Complementary to HBP1037S6R Pb-free package Equivalent Circuit Outline HBN2412S6R SOT-363R Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 60 40 6 200 200(total) 150 -55~+150 (Note) Note : 150mW per element must not be exceeded. Unit V V V mA mW °C °C HBN2412S6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C202S6R Issued Date : 2003.06.11 Revised Date : 2006.01.19 Page No. : 2/5 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE hFE fT Cob Min. 60 40 6 200 25 300 - Typ. - Max. 100 100 0.3 1 560 4 Unit V V V nA nA V V MHz pF Test Conditions IC=100µA IC=1mA IE=50µA VCB=60V VEB=5V IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=1mA VCE=6V, IC=150mA VCE=20V, IC=10mA, f=100MHz VCB=5V, f=1MHz *Pulse Test: Pulse Width ≤380...