STH310N10F7-6

STH310N10F7-2, STH310N10F7-6 N-channel 100 V, 1.9 mΩ typ., 180 A STripFET™ VII DeepGATE™ 22 Power MOSFET in H PAK-2 and H PAK-6 packages Datasheet - production data Features TAB 2 3 1 H2PAK-2 TAB 1 H2PAK-6 7 Figure 1. Internal schematic diagram Order codes VDS RDS(on) max. ID STH310N10F7-2 100 V STH310N10F7-6 2.3 mΩ 180 A Ultra low on-resistance 100% avalanche tested Applications Switching applications Description th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Order codes STH310N10F7-2 STH310N10F7-6 Table 1. Device summary Marking Package 310N10F7 2 H PAK-2 2 H PAK-6 Packaging Tape and reel July 2013 This is information on a product in full production. DocID024040 Rev 2 1/19 www.st.com Contents Contents STH310N10F7-2, STH310N10F7-6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . ....