Automotive-grade N-channel Power MOSFET
STH300NH02L-6
Automotive-grade N-channel 24 V, 0.95 mΩ typ., 180 A
2
STripFET™ III Power MOSFET in a H PAK-6 package
Da...
Description
STH300NH02L-6
Automotive-grade N-channel 24 V, 0.95 mΩ typ., 180 A
2
STripFET™ III Power MOSFET in a H PAK-6 package
Datasheet − production data
Features
TAB
1 H2PAK-6
7
Order code STH300NH02L-6
VDSS 24 V
RDS(on) max. ID (1) < 1.2 mΩ 180 A
1. Current limited by package.
Designed for automotive applications and AEC-Q101 qualified
Conduction losses reduced Low profile, very low parasitic inductance, high
current package
Figure 1. Internal schematic diagram
Applications
Switching applications
Description
This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance.
Order code STH300NH02L-6
Table 1. Device summary
Marking
Package
300NH02L
2
H PAK-6
Packaging Tape and reel
July 2013
This is information on a product in full production.
DocID019022 Rev 4
1/15
www.st.com
15
Contents
Contents
STH300NH02L-6
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . ...
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