C4497

2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC4497 High Voltage Control Applications Unit: mm High voltage: VCBO = 300 V, VCEO = 300 V Low saturation voltage: VCE (sat) = 0.5 V (max) Small collector output capacitance: Cob = 3 pF (typ.) Complementary to 2SA1721 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 300 V 300 V 6 V 100 mA 20 mA 200 mW 150 °C −55 to 150 °C JEDEC JEITA TO-236MOD SC-59 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-3F1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.012 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Start of commercial production 1988-09 1 2014-03-01 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut...