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MMG3012NT1

Freescale Semiconductor

Heterojunction Bipolar Transistor

Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity...


Freescale Semiconductor

MMG3012NT1

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Description
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3012NT1 is a general purpose amplifier that is internally input matched and internally output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF. Features  Frequency: 0--6000 MHz  P1dB: 18.5 dBm @ 900 MHz  Small--Signal Gain: 19 dB @ 900 MHz  Third Order Output Intercept Point: 34 dBm @ 900 MHz  Single 5 V Supply  Internally Matched to 50 Ohms  Cost--effective SOT--89 Surface Mount Plastic Package  In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Document Number: MMG3012NT1 Rev. 8, 9/2014 MMG3012NT1 0--6000 MHz, 19 dB 18.5 dBm InGaP HBT GPA SOT--89 Table 1. Typical Performance (1) Characteristic 900 2140 Symbol MHz MHz Small--Signal Gain (S21) Gp 19 15.8 Input Return Loss (S11) IRL --18 --20 Output Return Loss (S22) ORL --18 --12 Power Output @1dB Compression P1dB 18.5 19 Third Order Output Intercept Point OIP3 34 32 1. VCC = 5 Vdc, TA = 25C, 50 ohm system. 3500 MHz 13.4 --17 --16 18 31 Unit dB dB dB dBm dBm Table 2. Maximum Ratings Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature Symbol VCC ICC Pin Tstg TJ Value 7 300 ...




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