THD219HI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE s HIGH VOLTAGE CAPABILITY s...
THD219HI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER
TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE s HIGH VOLTAGE CAPABILITY s U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N))
APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR
TV AND MONITORS
DESCRIPTION The THD219HI is manufactured using Multiepitaxial Mesa technology for cost-effective high performance end uses a Hollow Emitter structure to enhance switching speeds. The THD series is designed for use in horizontal deflection circuits in televisions and monitors.
3 2 1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VCBO VCEO V EBO IC ICM IB IBM Ptot Tstg Tj
Parameter Collect or-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitt er-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 oC St orage Temperature Max. Operating Junction Temperature
August 1996
Value 1500 700
10 8 15 5 8 54 -65 to 150 150
Uni t V V V A A A A W oC oC
1/6
THD219HI
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Max 2.3 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICES Collect or Cut-off Current (VBE = 0)
VCE = 1500 V VCE = 1500 V Tj = 125 oC
IEBO VCEO(sus)
Emitter Cut-off Current (IC = 0)
Co lle ct or- Em it t er Sustaining Voltage
VEB = 5 V IC = 100 mA
VEBO VCE(sat )∗
Emitter-Base Voltage (IC = 0)
Co lle ct or- Em it t er S...