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GAL16V8

Lattice Semiconductor

High Performance E2CMOS PLD Generic Array Logic

GAL16V8 High Performance E2CMOS PLD Generic Array Logic™ Features • HIGH PERFORMANCE E2CMOS® TECHNOLOGY — 3.5 ns Maximum...


Lattice Semiconductor

GAL16V8

File Download Download GAL16V8 Datasheet


Description
GAL16V8 High Performance E2CMOS PLD Generic Array Logic™ Features HIGH PERFORMANCE E2CMOS® TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 3.0 ns Maximum from Clock Input to Data Output — UltraMOS® Advanced CMOS Technology 50% to 75% REDUCTION IN POWER FROM BIPOLAR — 75mA Typ Icc on Low Power Device — 45mA Typ Icc on Quarter Power Device ACTIVE PULL-UPS ON ALL PINS E2 CELL TECHNOLOGY — Reconfigurable Logic — Reprogrammable Cells — 100% Tested/100% Yields — High Speed Electrical Erasure (<100ms) — 20 Year Data Retention EIGHT OUTPUT LOGIC MACROCELLS — Maximum Flexibility for Complex Logic Designs — Programmable Output Polarity — Also Emulates 20-pin PAL® Devices with Full Function/Fuse Map/Parametric Compatibility PRELOAD AND POWER-ON RESET OF ALL REGISTERS — 100% Functional Testability APPLICATIONS INCLUDE: — DMA Control — State Machine Control — High Speed Graphics Processing — Standard Logic Speed Upgrade ELECTRONIC SIGNATURE FOR IDENTIFICATION I 8 I OLMC OE Functional Block Diagram I/CLK CLK 8 I 8 I OLMC I/O/Q OLMC I/O/Q PROGRAMMABLE AND-ARRAY (64 X 32) 8 OLMC I/O/Q I 8 OLMC I/O/Q I 8 OLMC I/O/Q I 8 OLMC I/O/Q I 8 OLMC I/O/Q I/O/Q I/OE Pin Configuration PLCC I I 2 I I I I I 8 14 9 I GND 11 I/OE I/O/Q 13 I/O/Q 6 4 I/CLK Vcc 20 18 I/O/Q I/O/Q 16 I/O/Q I/O/Q I/O/Q I/O/Q Description The GAL16V8, at 3.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating...




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