Document
IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL
512Mx8, 256Mx16 4Gb DDR3 SDRAM
FEATURES Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V High speed data transfer rates with system
frequency up to 1066 MHz 8 internal banks for concurrent operation 8n-Bit pre-fetch architecture Programmable CAS Latency Programmable Additive Latency: 0, CL-1,CL-2 Programmable CAS WRITE latency (CWL) based
on tCK Programmable Burst Length: 4 and 8 Programmable Burst Sequence: Sequential or
Interleave BL switch on the fly Auto Self Refresh(ASR) Self Refresh Temperature(SRT)
SEPTEMBER 2016
Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
Partial Array Self Refresh Asynchronous RESET pin TDQS (Termination Data Strobe) supported (x8
only) OCD (Off-Chip Driver Impedance Adjus.